dpls315e dpls315e low v ce(sat) pnp surface mount transistor features ? epitaxial planar die construction ? low collector-emitter saturation resistance r ce(sat) = 70m at 3a ? high dc current gain h fe > 300 at i c = 2a ? complementary npn type available (dnls412e) ? ideally suited for automated assembly processes ? ideal for medium power switching or amplification applications ? lead free by design/rohs compliant (note 1) ? ?green? device (note 2) mechanical data ? case: sot-223 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminals: finish ? matte tin annealed over copper leadframe (lead free plating). solderable per mil-std-202, method 208 ? marking information: see page 3 ? ordering information: see page 3 ? weight: 0.112 grams (approximate) sot-223 ds31325 rev. 3 - 2 1 of 4 www.diodes.com dpls315e ? diodes incorporated new od od p rr uct t ew p uc 2,4 3 1 collector emitte r base 4 3 2 1 c c b e top view schematic and pin configuration maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo -15 v collector-emitter voltage v ceo -15 v emitter-base voltage v ebo -5 v continuous collector current i c -3 a peak pulse current i cm -8 a thermal characteristics characteristic symbol value unit power dissipation @ t a = 25c (note 3) p d 1 w thermal resistance, junction to ambient air (note 1) @t a = 25c r ja 125 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 1. no purposefully added lead. 2. diodes inc.'s "green" policy c an be found on our website at http:// www.di odes.com/products/lead_f ree/index.php. 3. device mounted on fr-4 pcb, pad layout as shown on page 4 or in diodes inc. s uggested pad layout docum ent ap02001, which can be found on our website at http://www.di odes.com/datasheets/ap02001.pdf .
electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 4) collector-base breakdown voltage v (br)cbo -15 ? ? v i c = -100 a, i e = 0 collector-emitter breakdown voltage v (br)ceo -15 ? ? v i c = -10ma, i b = 0 emitter-base breakdown voltage v (br)ebo -5 ? ? v i e = -100 a, i c = 0 collector cutoff current i cbo ? ? -0.1 a v cb = -10v, i e = 0 emitter cutoff current i ebo ? ? -0.1 a v eb = -4v, i c = 0 on characteristics (note 4) collector-emitter saturation voltage v ce(sat) ? -0.08 -0.12 -0.22 -0.21 -0.15 -0.25 -0.45 -0.5 v i c = -0.5a, i b = -2.5ma i c = -1a, i b = -5ma i c = -2a, i b = -10ma i c = -3a, i b = -50ma base-emitter saturation voltage v be(sat) ? ? -0.9 v i c = -1a, i b = -5ma base-emitter turn-on voltage v be(on) ? -0.75 ? v v ce = -2v, i c = -1a dc current gain h fe 500 400 300 150 ? ? ? ? 1500 ? ? ? ? v ce = -2v, i c = -10ma v ce = -2v, i c = -1a v ce = -2v, i c = -2a v ce = -2v, i c = -6a ac characteristics transition frequency f t 100 ? ? mhz v ce = -5v, i c = -50ma, f = 50mhz input capacitance c ibo ? 245 ? mhz v eb = -0.5v, f = 1mhz output capacitance c obo ? 45 ? pf v cb = -10v, f = 1mhz switching times t on t off ? ? 35 200 ? ? ns ns v cc = -10v, i c = -500ma, i b1 = -i b2 = -50ma new product notes: 4. pulse test: pulse width 300 s. duty cycle 2.0%. 0 0.2 0.4 25 50 75 100 125 150 p , p o we r dissi p a t i o n (mw) d t , ambient temperature (c) fig. 1 max power dissipation vs. ambient temperature a 0.6 0.8 1.0 0 -v , collector-emitter voltage (v) ce -i , c o lle c t o r c u r r e n t (a) c fig. 2 typical collector current vs. collector-emitter voltage 0 0.5 1.0 1.5 2.0 2.5 3.0 0123 45 i = -1ma b i = -2ma b i = -3ma b i = -4ma b i = -5ma b ds31325 rev. 3 - 2 2 of 4 www.diodes.com dpls315e ? diodes incorporated
0 200 400 600 800 1,000 1,200 1,400 1,600 0.001 0.01 0.1 1 10 -i , collector current (a) c -v , c o lle c t o r -emi t t e r saturation voltage (v) ce(sat) fig. 4 typical collector-emitter saturation voltage vs. collector current 0 0.2 0.4 0.6 0.8 1.0 0.001 0.01 0.1 1 10 -i , collector current (a) c -v , base-emi t t e r t u r n- o n v o l t a g e (v) be(on) fig. 5 typical base-emitter turn-on voltage vs. collector current 0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 fig. 6 typical base-emitter saturation voltage vs. collector current 0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 -i , collector current (a) c -v , base-emi t t e r sa t u r a t i o n v o l t a g e (v) be(sat) new product ordering information (note 5) device packaging shipping DPLS315E-13 sot-223 2500/tape & reel notes: 5. for packaging details, please go to our website at http://www.di odes.com/ap02007.pdf. marking information p315 y w w (top view) p315 = product type marking code yww = date code marking y = last digit of year ex: 7 = 2007 ww = week code 01 - 52 ds31325 rev. 3 - 2 3 of 4 www.diodes.com dpls315e ? diodes incorporated
ds31325 rev. 3 - 2 4 of 4 www.diodes.com dpls315e ? diodes incorporated package outline dimensions sot-223 dim min max typ a 1.55 1.65 1.60 a1 0.010 0.15 0.05 b1 2.90 3.10 3.00 b2 0.60 0.80 0.70 c 0.20 0.30 0.25 d 6.45 6.55 6.50 e 3.45 3.55 3.50 e1 6.90 7.10 7.00 e ? ? 4.60 e1 ? ? 2.30 l 0.85 1.05 0.95 q 0.84 0.94 0.89 all dimensions in mm new product suggested pad layout (unit:mm) important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the ri ghts of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products are represented on our website, harmless against all damages. life support diodes incorporated products are not authoriz ed for use as critical components in life support devices or systems without the e xpressed written approval of the president of diodes incorporated.
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